STT3402N 6.3 a, 30 v, r ds(on) 27 m ? n-channel enhancement mode mos.fet elektronische bauelemente 19-nov-2010 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen and lead-free description these miniature surface mount mosfets utilize high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. typical applications are power switch, power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. typical applications ? low r ds(on) provides higher efficiency and extends battery life. ? low gate charge. ? fast switch. ? miniature tsop-6 surface mount package saves board space. product summary STT3402N v ds (v) r ds (on) (m ? ? i d (a) 30 0.027@v gs = 10v 6.3 0.035@v gs = 4.5v 5.5 package information package mpq leadersize tsop-6 3k 7? inch absolute maximum ratings(t a =25 c unless otherwise noted) parameter symbol ratings unit maximum drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current 1 t a = 25 c i d 6.3 a t a = 70 c 5.2 pulsed drain current 2 i dm 20 a continuous source current (diode conduction) 1 i s 1.3 a power dissipation 1 t a = 25 c p d 1.6 w t a = 70 c 1.0 operating junction and st orage temperature range tj, tstg -55 ~ 150 c thermal resistance ratings parameter symbol maximum unit maximum junction to ambient 1 t Q 5 sec r ? c / w notes 1 surface mounted on 1? x 1? fr4 board. 2 pulse width limited by maximum junction temperature. ref. millimete r ref. millimete r min. max. min. max. a 2.70 3.10 g 0 0.10 b 2.60 3.00 h 0.60 ref. c 1.40 1.80 j 0.12 ref. d 1.10 max. k 0 10 e 1.90 ref. l 0.95 ref. f 0.30 0.50 tsop-6 b l f h c j d g k a e 1 23 4 5 6 d g d d d s
STT3402N 6.3 a, 30 v, r ds(on) 27 m ? n-channel enhancement mode mos.fet elektronische bauelemente 19-nov-2010 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions switch off characteristics drain-source breakdown voltage v (br)dss 30 - - v v gs =0v, i d = 250ua gate-body leakage i gss - - 100 na v ds = 0v, v gs = 20v zero gate voltage drain current i dss - - 1 ua v ds = 24v, v gs = 0v - - 10 v ds = 24v, v gs = 0v, t j = 55 c switch on characteristics gate-threshold voltage v gs(th) 1.0 1.6 3.0 v v ds =v gs , i d = 250ua on-state drain current 1 i d(on) 20 - - a v ds = 5v, v gs = 10v drain-source on-resistance 1 r ds(on) - 23 27 m ? v gs = 10v, i d = 6.3a - 32 39 v gs = 10v, i d = 6.3a, t j = 55 c - 29 35 v gs = 4.5v, i d = 5.5a forward transconductance 1 g fs - 45 - s v ds = 10v, i d = 6.3a diode forward voltage 1 v sd - 0.75 1.2 v i s = 1.3a, v gs = 0v dynamic b total gate charge q g - 9 13 nc v ds = 15v, v gs = 5v, i d = 6.3a, r l = 6 ? gate-source charge q gs - 2.9 - gate-drain charge q gd - 3.2 - switching characteristics turn-on delay time t d(on) - 6 13 ns v ds = 15v, v gen = 10v, r l = 6 ? , i d = 1a, r gen = 6 ? rise time t r - 10 19 turn-off delay time t d(off) - 18 30 fall time t f - 5 13 notes 1 pulse test pw Q 300 us duty cycle Q 2%. 2 guaranteed by design, not su bject to production testing.
STT3402N 6.3 a, 30 v, r ds(on) 27 m ? n-channel enhancement mode mos.fet elektronische bauelemente 19-nov-2010 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
STT3402N 6.3 a, 30 v, r ds(on) 27 m ? n-channel enhancement mode mos.fet elektronische bauelemente 19-nov-2010 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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